Method for preparing homogeneous single crystal ternary III-V alloys
A method for producing homogenous single crystal III--V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition which would freeze into the desired crystal composition. The alloy of the floating crucible is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.
- Research Organization:
- Solar Energy Research Inst., Golden, CO (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7566930
- Application Number:
- ON: DE92017037; PAN: 7-566,930
- OSTI ID:
- 10159715
- Resource Relation:
- Other Information: PBD: 14 Aug 1990
- Country of Publication:
- United States
- Language:
- English
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