Development of PLZT dielectrics on base-metal foils for embedded capacitors.

Conference · Fri Jan 01 00:00:00 EST 2010 · J. Eur. Ceram. Soc.

DOI:https://doi.org/10.1016/j.jeurceramsoc.2009.05.006· OSTI ID:1015934

Balachandran, U; Kwon, D K; Narayanan, M; Ma, B ^[1]

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1. Energy Systems

We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel and copper substrates to create film-on-foil capacitors that exhibit excellent dielectric properties and superior breakdown strength. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength {approx}2.5 MV/cm. With PLZT deposited directly on Cu foils, we observed dielectric constant {approx}1100, dielectric loss (tan {delta}) {approx}0.06, and leakage current density of 7.3 x 10{sup -9} A/cm{sup 2} when measured at room temperature.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: EE
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 1015934
• Report Number(s): ANL/ES/CP-62275; TRN: US201112%%72
• Journal Information: J. Eur. Ceram. Soc., Vol. 30, Issue 2 ; Jan. 2010; Conference: Electroceramics Eleven; Aug. 31, 2008 - Sep. 3, 2008; Manchester, UK
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
BREAKDOWN
CAPACITORS
COPPER
DEPOSITION
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
LEAKAGE CURRENT
NICKEL
PERMITTIVITY
SUBSTRATES