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Title: Trapping induced N{sub eff} and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

Abstract

The trapping of both non-equilibrium electrons and holes by neutron induced deep levels in high resistivity silicon planar detectors have been observed. In the experiments Transient Current and Charge Techniques, with short laser light pulse excitation have been applied at temperature ranges of 77--300 k. Light pulse illumination of the front (p{sup +}) and back (n{sup +}) contacts of the detectors showed effective trapping and detrapping, especially for electrons. At temperatures lower than 150 k, the detrapping becomes non-efficient, and the additional negative charge of trapped electrons in the space charge region (SCR) of the detectors leads to dramatic transformations of the electric field due to the distortion of the effective space charge concentration N{sub eff}. The current and charge pulses transformation data can be explained in terms of extraction of electric field to the central part of the detector from the regions near both contacts. The initial field distribution may be recovered immediately by dropping reverse bias, which injects both electrons and holes into the space charge region. In the paper, the degree of the N{sub eff} distortions among various detectors irradiated by different neutron fluences are compared.

Authors:
; ;
Publication Date:
Research Org.:
Brookhaven National Lab., Upton, NY (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States); National Research Council, Washington, DC (United States)
OSTI Identifier:
10158654
Report Number(s):
BNL-60154; CONF-9405168-1
ON: DE94013535; CNN: Grant LI-CAST93; TRN: 94:012201
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Conference
Resource Relation:
Conference: 6. Pisa meeting on advanced detectors,Elba (Italy),22-28 May 1994; Other Information: PBD: Feb 1994
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 43 PARTICLE ACCELERATORS; SI SEMICONDUCTOR DETECTORS; DAMAGING NEUTRON FLUENCE; SPACE CHARGE; TRAPPING; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; ELECTRIC CONDUCTIVITY; 440104; 430303; HIGH ENERGY PHYSICS INSTRUMENTATION; EXPERIMENTAL FACILITIES AND EQUIPMENT

Citation Formats

Eremin, V, Li, Z, and Iljashenko, I. Trapping induced N{sub eff} and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors. United States: N. p., 1994. Web.
Eremin, V, Li, Z, & Iljashenko, I. Trapping induced N{sub eff} and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors. United States.
Eremin, V, Li, Z, and Iljashenko, I. 1994. "Trapping induced N{sub eff} and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors". United States. https://www.osti.gov/servlets/purl/10158654.
@article{osti_10158654,
title = {Trapping induced N{sub eff} and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors},
author = {Eremin, V and Li, Z and Iljashenko, I},
abstractNote = {The trapping of both non-equilibrium electrons and holes by neutron induced deep levels in high resistivity silicon planar detectors have been observed. In the experiments Transient Current and Charge Techniques, with short laser light pulse excitation have been applied at temperature ranges of 77--300 k. Light pulse illumination of the front (p{sup +}) and back (n{sup +}) contacts of the detectors showed effective trapping and detrapping, especially for electrons. At temperatures lower than 150 k, the detrapping becomes non-efficient, and the additional negative charge of trapped electrons in the space charge region (SCR) of the detectors leads to dramatic transformations of the electric field due to the distortion of the effective space charge concentration N{sub eff}. The current and charge pulses transformation data can be explained in terms of extraction of electric field to the central part of the detector from the regions near both contacts. The initial field distribution may be recovered immediately by dropping reverse bias, which injects both electrons and holes into the space charge region. In the paper, the degree of the N{sub eff} distortions among various detectors irradiated by different neutron fluences are compared.},
doi = {},
url = {https://www.osti.gov/biblio/10158654}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {2}
}

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