Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
Patent
·
OSTI ID:1015463
- Tijeras, NM
- Albuquerque, NM
A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 7,915,626
- Application Number:
- US Patent Application 11/504,885
- OSTI ID:
- 1015463
- Country of Publication:
- United States
- Language:
- English
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
|
journal | June 2003 |
Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
|
journal | October 2005 |
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