Long wavelength characterization of internal quantum efficiency in LT--GaAs MSM photodiodes

Conference · Sun Dec 01 00:00:00 EST 1991

OSTI ID:10152380

Morse, J D; Mariella, Jr, R P

Metal-Semiconductor-Metal (MSM) photodiodes fabricated from low temperature all grown GaAs by molecular beam epitaxy have been characterized for wavelengths extending out to 1.5{mu}m. External quantum efficiencies on the order of 0.5 % have been measured for subbandgap wavelengths, which translates to internal quantum efficiencies of 2--4 % for the interdigitated electrode structure with 1{mu}m finger spacing and width. Although the effective lifetime of the LT-GaAs has been determined to be

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 10152380
• Report Number(s): UCRL-JC-109348; CONF-911202-89; ON: DE93012487
• Resource Relation: Conference: Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991; Other Information: PBD: Dec 1991
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
36 MATERIALS SCIENCE
PHOTODIODES
TESTING
QUANTUM EFFICIENCY
GALLIUM ARSENIDES
INFRARED RADIATION
PHOTOCURRENTS
MOLECULAR BEAM EPITAXY
FABRICATION
440600
360601
360606
OPTICAL INSTRUMENTATION
PREPARATION AND MANUFACTURE
PHYSICAL PROPERTIES