Plasma-based EUV light source

Shumlak, Uri; Golingo, Raymond; Nelson, Brian A

Title: Plasma-based EUV light source

Patent · Tue Nov 02 00:00:00 EDT 2010

OSTI ID:1014955

Shumlak, Uri ^[1]; Golingo, Raymond ^[1]; Nelson, Brian A ^[2]

Seattle, WA
Mountlake Terrace, WA

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

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Research Organization:: The University of Washington (Seattle, WA)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG03-98ER54460

Assignee:: The University of Washington (Seattle, WA)

Patent Number(s):: 7,825,391

Application Number:: US Patent Application 12/101,083

OSTI ID:: 1014955

Country of Publication:: United States

Language:: English

References (25)

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