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Title: Plasma-based EUV light source

Abstract

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Inventors:
 [1];  [1];  [2]
  1. (Seattle, WA)
  2. (Mountlake Terrace, WA)
Publication Date:
Research Org.:
The University of Washington (Seattle, WA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014955
Patent Number(s):
7,825,391
Application Number:
US Patent Application 12/101,083
Assignee:
The University of Washington (Seattle, WA) OAK
DOE Contract Number:  
FG03-98ER54460
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Shumlak, Uri, Golingo, Raymond, and Nelson, Brian A. Plasma-based EUV light source. United States: N. p., 2010. Web.
Shumlak, Uri, Golingo, Raymond, & Nelson, Brian A. Plasma-based EUV light source. United States.
Shumlak, Uri, Golingo, Raymond, and Nelson, Brian A. Tue . "Plasma-based EUV light source". United States. https://www.osti.gov/servlets/purl/1014955.
@article{osti_1014955,
title = {Plasma-based EUV light source},
author = {Shumlak, Uri and Golingo, Raymond and Nelson, Brian A.},
abstractNote = {Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {11}
}

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