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Title: Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Abstract

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Inventors:
 [1];  [2];  [3];  [4];  [4];  [5];  [6];  [7];  [8];  [9];  [10];  [10];  [11]
  1. Orinda, CA
  2. Santa Cruz, CA
  3. Moraga, CA
  4. Berkeley, CA
  5. Walnut Creek, CA
  6. Kensington, CA
  7. Oakland, CA
  8. Schaffhausen, CH
  9. Los Angeles, CA
  10. Albany, CA
  11. El Cerrito, CA
Publication Date:
Research Org.:
The Regents of the University of California (Oakland, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014896
Patent Number(s):
7,834,264
Application Number:
US Patent Application 11/645,236
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, Yang, Peidong, Mao, Samuel S, Russo, Richard E, Feick, Henning, Weber, Eicke R, Kind, Hannes, Huang, Michael, Yan, Haoquan, Wu, Yiying, and Fan, Rong. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom. United States: N. p., 2010. Web.
Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, Yang, Peidong, Mao, Samuel S, Russo, Richard E, Feick, Henning, Weber, Eicke R, Kind, Hannes, Huang, Michael, Yan, Haoquan, Wu, Yiying, & Fan, Rong. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom. United States.
Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, Yang, Peidong, Mao, Samuel S, Russo, Richard E, Feick, Henning, Weber, Eicke R, Kind, Hannes, Huang, Michael, Yan, Haoquan, Wu, Yiying, and Fan, Rong. Tue . "Methods of fabricating nanostructures and nanowires and devices fabricated therefrom". United States. https://www.osti.gov/servlets/purl/1014896.
@article{osti_1014896,
title = {Methods of fabricating nanostructures and nanowires and devices fabricated therefrom},
author = {Majumdar, Arun and Shakouri, Ali and Sands, Timothy D and Yang, Peidong and Mao, Samuel S and Russo, Richard E and Feick, Henning and Weber, Eicke R and Kind, Hannes and Huang, Michael and Yan, Haoquan and Wu, Yiying and Fan, Rong},
abstractNote = {One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {11}
}

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