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Title: Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.

Abstract

We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} V/cm were measured at room temperature. Finally, remanent polarization (P{sub r}) of {approx} 2.0 x 10{sup -5} C/cm{sup 2}, coercive electric field (E{sub c}) of {approx}3.4 x 10{sup 4} V/cm, and energy density of {approx}45 J/cm{sup 3} were determined from room-temperature hysteresis loop measurements on PLZT/LNO/Ni film-on-foil capacitors with 250-{micro}m-diameter platinum top electrodes.

Authors:
; ; ; ; ;  [1]
  1. Energy Systems
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
EE
OSTI Identifier:
1014837
Report Number(s):
ANL/ES/JA-68881
Journal ID: 0025-5408; TRN: US201111%%375
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Mater. Res. Bull.
Additional Journal Information:
Journal Volume: 46; Journal Issue: 7 ; Jul. 2011
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; ACETIC ACID; BREAKDOWN; CAPACITORS; CHEMISTRY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRODES; ENERGY DENSITY; FABRICATION; HYSTERESIS; LEAKAGE CURRENT; NICKEL; PERMITTIVITY; PLATINUM; POLARIZATION; SILICON; SOL-GEL PROCESS; SUBSTRATES

Citation Formats

Ma, B, Tong, S, Narayanan, M, Liu, S, Chao, S, and Balachandran, U. Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.. United States: N. p., 2011. Web. doi:10.1016/j.materresbull.2011.02.047.
Ma, B, Tong, S, Narayanan, M, Liu, S, Chao, S, & Balachandran, U. Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.. United States. https://doi.org/10.1016/j.materresbull.2011.02.047
Ma, B, Tong, S, Narayanan, M, Liu, S, Chao, S, and Balachandran, U. Fri . "Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.". United States. https://doi.org/10.1016/j.materresbull.2011.02.047.
@article{osti_1014837,
title = {Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.},
author = {Ma, B and Tong, S and Narayanan, M and Liu, S and Chao, S and Balachandran, U},
abstractNote = {We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} V/cm were measured at room temperature. Finally, remanent polarization (P{sub r}) of {approx} 2.0 x 10{sup -5} C/cm{sup 2}, coercive electric field (E{sub c}) of {approx}3.4 x 10{sup 4} V/cm, and energy density of {approx}45 J/cm{sup 3} were determined from room-temperature hysteresis loop measurements on PLZT/LNO/Ni film-on-foil capacitors with 250-{micro}m-diameter platinum top electrodes.},
doi = {10.1016/j.materresbull.2011.02.047},
url = {https://www.osti.gov/biblio/1014837}, journal = {Mater. Res. Bull.},
number = 7 ; Jul. 2011,
volume = 46,
place = {United States},
year = {2011},
month = {7}
}