Direct cooled power electronics substrate
- Powell, TN
- Oak Ridge, TN
- Kingston, TN
- Knoxville, TN
The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Number(s):
- 7,796,388
- Application Number:
- US Patent Application 12/400,081
- OSTI ID:
- 1014717
- Country of Publication:
- United States
- Language:
- English
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