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Title: Manufacture of silicon-based devices having disordered sulfur-doped surface layers

Abstract

The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

Inventors:
 [1]
  1. Concord, MA
Publication Date:
Research Org.:
President and Fellows of Harvard College (Cambridge, MA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014531
Patent Number(s):
7,354,792
Application Number:
10/950,248
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
DOE Contract Number:  
FC36-01GO11051
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Carey, III, James Edward, and Mazur, Eric. Manufacture of silicon-based devices having disordered sulfur-doped surface layers. United States: N. p., 2008. Web.
Carey, III, James Edward, & Mazur, Eric. Manufacture of silicon-based devices having disordered sulfur-doped surface layers. United States.
Carey, III, James Edward, and Mazur, Eric. Tue . "Manufacture of silicon-based devices having disordered sulfur-doped surface layers". United States. https://www.osti.gov/servlets/purl/1014531.
@article{osti_1014531,
title = {Manufacture of silicon-based devices having disordered sulfur-doped surface layers},
author = {Carey, III, James Edward and Mazur, Eric},
abstractNote = {The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.},
doi = {},
url = {https://www.osti.gov/biblio/1014531}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {4}
}

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Works referenced in this record:

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