Manufacture of silicon-based devices having disordered sulfur-doped surface layers
- Concord, MA
The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.
- Research Organization:
- President and Fellows of Harvard College (Cambridge, MA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-01GO11051
- Assignee:
- President and Fellows of Harvard College (Cambridge, MA)
- Patent Number(s):
- 7,354,792
- Application Number:
- 10/950,248
- OSTI ID:
- 1014531
- Country of Publication:
- United States
- Language:
- English
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