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Title: Method for double-sided processing of thin film transistors

Patent ·
OSTI ID:1014530

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Research Organization:
Wisconsin Alumi Research Foundation (Madison, WI)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-03ER46028
Assignee:
Wisconsin Alumi Research Foundation (Madison, WI)
Patent Number(s):
7,354,809
Application Number:
11/276,065
OSTI ID:
1014530
Country of Publication:
United States
Language:
English

References (8)

Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination journal July 2002
Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates journal August 2005
Silicon-based nanomembrane materials: the ultimate in strain engineering conference January 2006
Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates journal March 2005
Three-dimensional integration: technology, use, and issues for mixed-signal applications journal March 2003
Three-Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks journal August 2004
Bendable single crystal silicon thin film transistors formed by printing on plastic substrates journal February 2005
A printable form of silicon for high performance thin film transistors on plastic substrates journal June 2004

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