Method for double-sided processing of thin film transistors
Patent
·
OSTI ID:1014530
- Madison, WI
- Middleton, WI
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
- Research Organization:
- Wisconsin Alumi Research Foundation (Madison, WI)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-03ER46028
- Assignee:
- Wisconsin Alumi Research Foundation (Madison, WI)
- Patent Number(s):
- 7,354,809
- Application Number:
- 11/276,065
- OSTI ID:
- 1014530
- Country of Publication:
- United States
- Language:
- English
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