Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry
Abstract
A second-generation monolithic silicon radiation sensor has been built and characterized. This pixel detector has CMOS circuitry fabricated directly in the high-resistivity floatzone substrate. The bulk is fully depleted from bias applied to the backside diode. Within the array, PMOS pixel circuitry forms the first stage amplifiers. Full CMOS circuitry implementing further amplification as well as column and row logic is located in the periphery of the pixel array. This allows a sparse-field readout scheme where only pixels with signals above a certain threshold are readout. We describe the fabrication process, circuit design, system performance, and results of gamma-ray radiation tests.
- Authors:
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014125
- Report Number(s):
- SLAC-PUB-14318
TRN: US1102624
- DOE Contract Number:
- AC02-76SF00515
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, and 17th Room Temperature Semiconductor Detectors Workshop, Knoxville, Tennessee, 30 Oct - 6 Nov 2010
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; DESIGN; SI SEMICONDUCTOR DETECTORS; TRANSISTORS; READOUT SYSTEMS; FABRICATION; PERFORMANCE; GAMMA DETECTION; TESTING; Instrumentation,INST
Citation Formats
Segal, J D, Kenney, C J, /SLAC, Parker, S I, /Hawaii U., Aw, C H, /UOB Ventiure Management, Singapore, Snoeys, W J, /CERN, Wooley, B, Plummer, J D, and /Stanford U., Elect. Eng. Dept. Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry. United States: N. p., 2011.
Web.
Segal, J D, Kenney, C J, /SLAC, Parker, S I, /Hawaii U., Aw, C H, /UOB Ventiure Management, Singapore, Snoeys, W J, /CERN, Wooley, B, Plummer, J D, & /Stanford U., Elect. Eng. Dept. Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry. United States.
Segal, J D, Kenney, C J, /SLAC, Parker, S I, /Hawaii U., Aw, C H, /UOB Ventiure Management, Singapore, Snoeys, W J, /CERN, Wooley, B, Plummer, J D, and /Stanford U., Elect. Eng. Dept. 2011.
"Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry". United States. https://www.osti.gov/servlets/purl/1014125.
@article{osti_1014125,
title = {Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry},
author = {Segal, J D and Kenney, C J and /SLAC and Parker, S I and /Hawaii U. and Aw, C H and /UOB Ventiure Management, Singapore and Snoeys, W J and /CERN and Wooley, B and Plummer, J D and /Stanford U., Elect. Eng. Dept.},
abstractNote = {A second-generation monolithic silicon radiation sensor has been built and characterized. This pixel detector has CMOS circuitry fabricated directly in the high-resistivity floatzone substrate. The bulk is fully depleted from bias applied to the backside diode. Within the array, PMOS pixel circuitry forms the first stage amplifiers. Full CMOS circuitry implementing further amplification as well as column and row logic is located in the periphery of the pixel array. This allows a sparse-field readout scheme where only pixels with signals above a certain threshold are readout. We describe the fabrication process, circuit design, system performance, and results of gamma-ray radiation tests.},
doi = {},
url = {https://www.osti.gov/biblio/1014125},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 20 00:00:00 EDT 2011},
month = {Fri May 20 00:00:00 EDT 2011}
}
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