Aligned crystalline semiconducting film on a glass substrate and method of making
Patent
·
OSTI ID:1013807
- Los Alamos, NM
A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 7,781,067
- Application Number:
- 11/581,978
- OSTI ID:
- 1013807
- Country of Publication:
- United States
- Language:
- English
Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates
|
journal | June 2005 |
Similar Records
High Efficiency, Inexpensive Thin Film III-V Photovoltaics using Single-Crystalline-Like, Flexible Substrates
Conductive layer for biaxially oriented semiconductor film growth
Growth of Epitaxial gamma-Al2O3 Films on Rigid Single-Crystal Ceramic Substrates and Flexible, Single-Crystal-Like Metallic Substrates by Pulsed Laser Deposition
Technical Report
·
Mon Nov 05 00:00:00 EST 2018
·
OSTI ID:1013807
Conductive layer for biaxially oriented semiconductor film growth
Patent
·
Tue Oct 30 00:00:00 EDT 2007
·
OSTI ID:1013807
Growth of Epitaxial gamma-Al2O3 Films on Rigid Single-Crystal Ceramic Substrates and Flexible, Single-Crystal-Like Metallic Substrates by Pulsed Laser Deposition
Journal Article
·
Thu Jan 01 00:00:00 EST 2009
· Thin Solid Films
·
OSTI ID:1013807