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Title: Method of transferring strained semiconductor structure

Abstract

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Inventors:
 [1];  [2]
  1. Santa Fe, NM
  2. College Station, TX
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013558
Patent Number(s):
7,638,410
Application Number:
US Patent Application 11/641,471
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM LANL
DOE Contract Number:
AC51-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Nastasi, Michael A, and Shao, Lin. Method of transferring strained semiconductor structure. United States: N. p., 2009. Web.
Nastasi, Michael A, & Shao, Lin. Method of transferring strained semiconductor structure. United States.
Nastasi, Michael A, and Shao, Lin. Tue . "Method of transferring strained semiconductor structure". United States. doi:. https://www.osti.gov/servlets/purl/1013558.
@article{osti_1013558,
title = {Method of transferring strained semiconductor structure},
author = {Nastasi, Michael A and Shao, Lin},
abstractNote = {The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 29 00:00:00 EST 2009},
month = {Tue Dec 29 00:00:00 EST 2009}
}

Patent:

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  • A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.
  • A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.
  • A method is described for patterning subsurface dislocation features in a semiconductor device, wherein said semiconductor device includes a semiconductor substrate and a strained semiconductor layer, the method comprising: (a) creating a pattern of semiconductor material on said semiconductor device, said deposited material is of a thickness which thermodynamically stabilizes areas of said strained semiconductor layer that lie beneath said pattern; and (b) generating a plurality of dislocations in select areas of said strained semiconductor layer by applying heat to said semiconductor device to cause a relaxation in areas of said strained layer which do not lie beneath said semiconductormore » material pattern, thereby creating said plurality of dislocations in said relaxed areas.« less
  • An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carriedmore » out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.« less