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Title: Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report

Abstract

The author recently reported that dialkylamido complexes are promising precursors to nitride thin films. On this basis it was reasoned that transition metal and main group disilazide complexes in which the silicon has dialkylamido substituents are potential precursors to ternary silicon nitride films. Bulky disilazide ligands are known to stabilize main group and transition metal complexes with low coordination numbers. Reaction of dimethylamine with Cl{sub 3}SiN(H)SiMe{sub 3} in hexane solution at 25{degrees}C gave the bulky disilazane [(Me{sub 2}N){sub 3}Si]N(h)SiMe{sub 3} (1) in 73% yield. Reaction of (1) with n-butyl lithium in benzene at 0{degrees}C produced [(Me{sub 2}N){sub 3}Si]N(Li)SiMe{sub 3} in 82% yield. LiN[Si(NMe{sub 2}){sub 3}]{sub 2} was chemically prepared in 92% yield and was converted to the amine with 83% yield. The author examined the use of amido precursors for main group oxide thin films. Sn(NMe{sub 2}){sub 4} and Si(NMe{sub 2}){sub 4} react with oxygen in an atmospheric pressure chemical vapor deposition reactor to give SnO{sub 2} and SiO{sub 2} films, respectively. The films were deposited on quartz, silicon, and glass at substrate temperatures of 250--400 {degrees}C. The results of the characterizations of the films and compounds are presented in this report.

Authors:
 [1]
  1. Univ. of Houston, TX (United States). Dept. of Chemistry
Publication Date:
Research Org.:
Los Alamos National Lab., NM (United States); Houston Univ., TX (United States). Dept. of Chemistry
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10132455
Report Number(s):
LA-SUB-94-41
ON: DE94008096; TRN: 94:003539
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION; TIN OXIDES; SILICON OXIDES; THIN FILMS; STRUCTURAL CHEMICAL ANALYSIS; PRECURSOR; PROGRESS REPORT; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; 360201; 400201; 360202; PREPARATION AND FABRICATION; CHEMICAL AND PHYSICOCHEMICAL PROPERTIES; STRUCTURE AND PHASE STUDIES

Citation Formats

Hoffman, D.M. Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report. United States: N. p., 1994. Web. doi:10.2172/10132455.
Hoffman, D.M. Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report. United States. doi:10.2172/10132455.
Hoffman, D.M. Tue . "Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report". United States. doi:10.2172/10132455. https://www.osti.gov/servlets/purl/10132455.
@article{osti_10132455,
title = {Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report},
author = {Hoffman, D.M.},
abstractNote = {The author recently reported that dialkylamido complexes are promising precursors to nitride thin films. On this basis it was reasoned that transition metal and main group disilazide complexes in which the silicon has dialkylamido substituents are potential precursors to ternary silicon nitride films. Bulky disilazide ligands are known to stabilize main group and transition metal complexes with low coordination numbers. Reaction of dimethylamine with Cl{sub 3}SiN(H)SiMe{sub 3} in hexane solution at 25{degrees}C gave the bulky disilazane [(Me{sub 2}N){sub 3}Si]N(h)SiMe{sub 3} (1) in 73% yield. Reaction of (1) with n-butyl lithium in benzene at 0{degrees}C produced [(Me{sub 2}N){sub 3}Si]N(Li)SiMe{sub 3} in 82% yield. LiN[Si(NMe{sub 2}){sub 3}]{sub 2} was chemically prepared in 92% yield and was converted to the amine with 83% yield. The author examined the use of amido precursors for main group oxide thin films. Sn(NMe{sub 2}){sub 4} and Si(NMe{sub 2}){sub 4} react with oxygen in an atmospheric pressure chemical vapor deposition reactor to give SnO{sub 2} and SiO{sub 2} films, respectively. The films were deposited on quartz, silicon, and glass at substrate temperatures of 250--400 {degrees}C. The results of the characterizations of the films and compounds are presented in this report.},
doi = {10.2172/10132455},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {3}
}