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Title: Thin-film decoupling capacitors for multi-chip modules

Abstract

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ({var_epsilon} {ge} 900), low dielectric losses (tan{delta} = 0.01), excellent insulation resistances ({rho} > 10{sup 13} {Omega}-cm at 125{degrees}C), and good breakdown field strengths (E{sub B} = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 {mu}m thick, which results in a large capacitance/area (8--9 nF/mm{sup 2}). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10130957
Report Number(s):
SAND-94-0163C; CONF-940596-2
ON: DE94007743; BR: GB0103012
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 44. electronic components and technology conference,Washington, DC (United States),1-4 May 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; CAPACITORS; FABRICATION; PLZT; DIELECTRIC PROPERTIES; SOL-GEL PROCESS; INTEGRATED CIRCUITS; THIN FILMS; PERMITTIVITY; 426000; 360104; COMPONENTS, ELECTRON DEVICES AND CIRCUITS; PHYSICAL PROPERTIES

Citation Formats

Dimos, D.: Lockwood, S.J., Schwartz, R.W., and Rodgers, M.S. Thin-film decoupling capacitors for multi-chip modules. United States: N. p., 1994. Web.
Dimos, D.: Lockwood, S.J., Schwartz, R.W., & Rodgers, M.S. Thin-film decoupling capacitors for multi-chip modules. United States.
Dimos, D.: Lockwood, S.J., Schwartz, R.W., and Rodgers, M.S. Tue . "Thin-film decoupling capacitors for multi-chip modules". United States. https://www.osti.gov/servlets/purl/10130957.
@article{osti_10130957,
title = {Thin-film decoupling capacitors for multi-chip modules},
author = {Dimos, D.: Lockwood, S.J. and Schwartz, R.W. and Rodgers, M.S.},
abstractNote = {Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ({var_epsilon} {ge} 900), low dielectric losses (tan{delta} = 0.01), excellent insulation resistances ({rho} > 10{sup 13} {Omega}-cm at 125{degrees}C), and good breakdown field strengths (E{sub B} = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 {mu}m thick, which results in a large capacitance/area (8--9 nF/mm{sup 2}). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {3}
}

Conference:
Other availability
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