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Title: Bounding the total-dose response of modern bipolar transistors

Abstract

The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

Authors:
; ;  [1];  [2];  [3];  [4];  [5]
  1. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
  2. Naval Surface Warfare Center-Crane, Crane, IN (United States)
  3. Sandia National Labs., Albuquerque, NM (United States)
  4. Analog Devices, Inc., Wilmington, MA (United States)
  5. RLP Research, Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10130954
Report Number(s):
SAND-94-0458C; CONF-940726-5
ON: DE94007742; BR: GB0103012
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 31. annual international nuclear and space radiation effects conference,Tucson, AZ (United States),18-22 Jul 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; IONIZING RADIATIONS; ELECTRIC CURRENTS; GAIN; SILICON OXIDES; 426000; 360605; COMPONENTS, ELECTRON DEVICES AND CIRCUITS; RADIATION EFFECTS

Citation Formats

Kosier, S.L., Wei, A., Schrimpf, R.D., Combs, W.E., Fleetwood, D.M., DeLaus, M., and Pease, R.L. Bounding the total-dose response of modern bipolar transistors. United States: N. p., 1994. Web.
Kosier, S.L., Wei, A., Schrimpf, R.D., Combs, W.E., Fleetwood, D.M., DeLaus, M., & Pease, R.L. Bounding the total-dose response of modern bipolar transistors. United States.
Kosier, S.L., Wei, A., Schrimpf, R.D., Combs, W.E., Fleetwood, D.M., DeLaus, M., and Pease, R.L. Tue . "Bounding the total-dose response of modern bipolar transistors". United States. https://www.osti.gov/servlets/purl/10130954.
@article{osti_10130954,
title = {Bounding the total-dose response of modern bipolar transistors},
author = {Kosier, S.L. and Wei, A. and Schrimpf, R.D. and Combs, W.E. and Fleetwood, D.M. and DeLaus, M. and Pease, R.L.},
abstractNote = {The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {3}
}

Conference:
Other availability
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