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Title: Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors

Abstract

The correlation of hot carrier stress and ionization induced gain degradation in npn BJTs was studied to determine if hot-carrier stress could be used as a hardness assurance tool for total dose. The correlation was measured at the wafer level and for several hardening variations for a single process technology. Additional experiments are planned and will be presented in the full paper. Based on a detailed physical analysis of the mechanisms for hot-carrier stress and ionization no correlation was expected. The results demonstrated the lack of correlation and indicate that hot-carrier stress degradation is not a predictor of total dose response.

Authors:
 [1]; ;  [2];  [3];  [4];  [5]
  1. RLP Research, Inc., (United States). Albuquerque, NM
  2. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
  3. Naval Surface Warfare Center, Crane, IN (United States)
  4. Analog Devices, Wilmington, MA (United States)
  5. Sandia National Labs., Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
Department of Defense, Washington, DC (United States)
OSTI Identifier:
10128085
Report Number(s):
SAND-94-0459C; CONF-940726-2
ON: DE94007289; BR: GB0103012; CNN: Contract C-N00164-92-D-0009
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 31. annual international nuclear and space radiation effects conference,Tucson, AZ (United States),18-22 Jul 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; TRANSISTORS; PHYSICAL RADIATION EFFECTS; IONIZING RADIATIONS; SEMICONDUCTOR JUNCTIONS; RADIATION DOSES; STRESSES; 426000; 360605; COMPONENTS, ELECTRON DEVICES AND CIRCUITS; RADIATION EFFECTS

Citation Formats

Pease, R.L., Kosier, S.L., Schrimpf, R.D., Combs, W.E., DeLaus, M., and Fleetwood, D.M.. Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors. United States: N. p., 1994. Web.
Pease, R.L., Kosier, S.L., Schrimpf, R.D., Combs, W.E., DeLaus, M., & Fleetwood, D.M.. Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors. United States.
Pease, R.L., Kosier, S.L., Schrimpf, R.D., Combs, W.E., DeLaus, M., and Fleetwood, D.M.. Tue . "Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors". United States. https://www.osti.gov/servlets/purl/10128085.
@article{osti_10128085,
title = {Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors},
author = {Pease, R.L. and Kosier, S.L. and Schrimpf, R.D. and Combs, W.E. and DeLaus, M. and Fleetwood, D.M.},
abstractNote = {The correlation of hot carrier stress and ionization induced gain degradation in npn BJTs was studied to determine if hot-carrier stress could be used as a hardness assurance tool for total dose. The correlation was measured at the wafer level and for several hardening variations for a single process technology. Additional experiments are planned and will be presented in the full paper. Based on a detailed physical analysis of the mechanisms for hot-carrier stress and ionization no correlation was expected. The results demonstrated the lack of correlation and indicate that hot-carrier stress degradation is not a predictor of total dose response.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {3}
}

Conference:
Other availability
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