Design of a large-scale plasma source ion implantation experiment

Conference · Thu Dec 31 00:00:00 EST 1992

OSTI ID:10115020

Wood, B P; Scheuer, J T; Nastasi, M A; Olsher, R H; Reass, W A; Rej, D J

In Plasma Source Ion Implantation (PSII), a target to be implanted is immersed in a weakly ionized plasma and pulsed to a high negative voltage. Ions in the plasma are accelerated toward the target and implanted in its surface, thereby modifying the properties of the surface. Experimental results reported in the literature have generally been for small targets. We present here the design of a large-scale PSII experiment under construction at Los Alamo`s National Laboratory, in which we plan to implant targets with surface areas of 1--2 m{sup 2} to doses of up to 5 {times} 10{sup 17} cm{sup {minus}2}. In presenting this design, we use Monte Carlo and particle-in-cell simulations to examine sheath expansion, implant current and dose, secondary electron emission, target sputtering, implant depth, and x-ray emission resulting from secondary electrons hitting the vacuum chamber wall.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 10115020
• Report Number(s): LA-UR-92-4141; CONF-921101-33; ON: DE93005438
• Resource Relation: Conference: 16. Materials Research Society (MRS) fall meeting,Boston, MA (United States),30 Nov - 5 Dec 1992; Other Information: PBD: [1992]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
HIGH-FREQUENCY DISCHARGES
DESIGN
PLASMA
USES
ION IMPLANTATION
TURBOMOLECULAR PUMPS
VACUUM SYSTEMS
PULSES
PHYSICAL RADIATION EFFECTS
HARDENING
MONTE CARLO METHOD
RADIATION DOSES
SECONDARY EMISSION
ELECTRIC CURRENTS
SPUTTERING
X RADIATION
PLASMA PRODUCTION
360106
420200
RADIATION EFFECTS
FACILITIES, EQUIPMENT, AND TECHNIQUES