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Title: The effect of uv light on ir absorption in chemically vapor deposited a-SiN{sub x}:H films

Abstract

We measured the optical absorption properties of Plasma Enhanced Chemically Vapor Deposited (PECVD) films of hydrogenated amorphous silicon nitride (a-SiN{sub x}:H) over the energy range from 0.54 to 2 eV using Photothermal Deflection Spectroscopy (PDS). The near-infrared absorption properties of these films measure the H bonded to Si or N as well as density of electronic gap states due to species like Si dangling bonds. Typical PDS spectra obtained on as-deposited films show a broad absorption tail with a large number of narrow absorption peaks. Nitride-related absorption was separated from that arising from the fused quartz substrates. In addition to the broad, featureless band tail, whose magnitude is quite sensitive to optical excitation with light above {approximately}3.9 eV, we observe a number of narrow absorption peaks which we identify as overtones of localized vibrational modes. Specifically, we see peaks at 0.82 and 1.20 eV which we identify as the 1st and second harmonics of N-H stretching vibrations, and several other peaks whose origins remain undetermined. Prolonged UV excitation produces no detectable change in these vibrational modes, although large changes are seen in the underlying absorption tail. This reinforces previous suggestions that photoinduced changes in these films do not arise frommore » rearrangement of the bonded hydrogen.« less

Authors:
 [1];  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. IBM Watson Research Center, Yorktown Heights, NY (United States). IBM Research Div.
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10113728
Report Number(s):
SAND-92-1520C; CONF-921101-18
ON: DE93004502
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: 16. Materials Research Society (MRS) fall meeting,Boston, MA (United States),30 Nov - 5 Dec 1992; Other Information: PBD: [1992]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; ABSORPTION SPECTRA; SILANES; FILMS; CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; AMORPHOUS STATE; VIBRATIONAL STATES; 360204; PHYSICAL PROPERTIES

Citation Formats

Seager, C H, and Kanicki, J. The effect of uv light on ir absorption in chemically vapor deposited a-SiN{sub x}:H films. United States: N. p., 1992. Web.
Seager, C H, & Kanicki, J. The effect of uv light on ir absorption in chemically vapor deposited a-SiN{sub x}:H films. United States.
Seager, C H, and Kanicki, J. Tue . "The effect of uv light on ir absorption in chemically vapor deposited a-SiN{sub x}:H films". United States.
@article{osti_10113728,
title = {The effect of uv light on ir absorption in chemically vapor deposited a-SiN{sub x}:H films},
author = {Seager, C H and Kanicki, J},
abstractNote = {We measured the optical absorption properties of Plasma Enhanced Chemically Vapor Deposited (PECVD) films of hydrogenated amorphous silicon nitride (a-SiN{sub x}:H) over the energy range from 0.54 to 2 eV using Photothermal Deflection Spectroscopy (PDS). The near-infrared absorption properties of these films measure the H bonded to Si or N as well as density of electronic gap states due to species like Si dangling bonds. Typical PDS spectra obtained on as-deposited films show a broad absorption tail with a large number of narrow absorption peaks. Nitride-related absorption was separated from that arising from the fused quartz substrates. In addition to the broad, featureless band tail, whose magnitude is quite sensitive to optical excitation with light above {approximately}3.9 eV, we observe a number of narrow absorption peaks which we identify as overtones of localized vibrational modes. Specifically, we see peaks at 0.82 and 1.20 eV which we identify as the 1st and second harmonics of N-H stretching vibrations, and several other peaks whose origins remain undetermined. Prolonged UV excitation produces no detectable change in these vibrational modes, although large changes are seen in the underlying absorption tail. This reinforces previous suggestions that photoinduced changes in these films do not arise from rearrangement of the bonded hydrogen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {12}
}

Conference:
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