Defect structure of semiconducting and insulating epitafial oxides. Progress report, May 1, 1991--April 30, 1992
Abstract
The study of the defect structure of semiconducting and insulating epitaxial oxides has continued. During this period, the growth and characterization of epitaxial BaTiO{sub 3} and SrTiO{sub 3} layers were undertaken. For the growth of the epitaxial oxides, an organometallic chemical vapor deposition technique was developed. For the deposition of BaTiO{sub 3}, we developed and used the second generation Ba precursor, barium (hexafluoroacetylacetonate){sub 2} (tetraglyme)(Ba(hfa){sub 2}{center_dot}tet) along with titanium tetraisoproxide as the titanium precursor. Recently, we have succeeded in depositing epitaxial BaTiO{sub 3} by using single crystalline LaAlO{sub 3} substrates. This development should significantly improve our electronic property and defect structure measurements since grain boundaries are eliminated in the layers. The structure of the epitaxial BaTiO{sub 3} was examined using both x-ray diffractometer measurements and high-resolution transmission electron microscopy (HRTEM).
- Authors:
- Publication Date:
- Research Org.:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 10109833
- Report Number(s):
- DOE/ER/45209-6
ON: DE92005080
- DOE Contract Number:
- FG02-85ER45209
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: PBD: [1991]
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; STRONTIUM TITANATES; CRYSTAL DEFECTS; BARIUM COMPOUNDS; PROGRESS REPORT; CHEMICAL VAPOR DEPOSITION; ORGANOMETALLIC COMPOUNDS; SUBSTRATES; THIN FILMS; DEEP LEVEL TRANSIENT SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; OPTICAL PROPERTIES; 360202; STRUCTURE AND PHASE STUDIES
Citation Formats
Wessels, B.W.. Defect structure of semiconducting and insulating epitafial oxides. Progress report, May 1, 1991--April 30, 1992. United States: N. p., 1991.
Web. doi:10.2172/10109833.
Wessels, B.W.. Defect structure of semiconducting and insulating epitafial oxides. Progress report, May 1, 1991--April 30, 1992. United States. doi:10.2172/10109833.
Wessels, B.W.. Tue .
"Defect structure of semiconducting and insulating epitafial oxides. Progress report, May 1, 1991--April 30, 1992". United States.
doi:10.2172/10109833. https://www.osti.gov/servlets/purl/10109833.
@article{osti_10109833,
title = {Defect structure of semiconducting and insulating epitafial oxides. Progress report, May 1, 1991--April 30, 1992},
author = {Wessels, B.W.},
abstractNote = {The study of the defect structure of semiconducting and insulating epitaxial oxides has continued. During this period, the growth and characterization of epitaxial BaTiO{sub 3} and SrTiO{sub 3} layers were undertaken. For the growth of the epitaxial oxides, an organometallic chemical vapor deposition technique was developed. For the deposition of BaTiO{sub 3}, we developed and used the second generation Ba precursor, barium (hexafluoroacetylacetonate){sub 2} (tetraglyme)(Ba(hfa){sub 2}{center_dot}tet) along with titanium tetraisoproxide as the titanium precursor. Recently, we have succeeded in depositing epitaxial BaTiO{sub 3} by using single crystalline LaAlO{sub 3} substrates. This development should significantly improve our electronic property and defect structure measurements since grain boundaries are eliminated in the layers. The structure of the epitaxial BaTiO{sub 3} was examined using both x-ray diffractometer measurements and high-resolution transmission electron microscopy (HRTEM).},
doi = {10.2172/10109833},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1991},
month = {Tue Dec 31 00:00:00 EST 1991}
}
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