Amorphous Ge bipolar blocking contacts on Ge detectors
Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10107115
- Report Number(s):
- LBL-30606; CONF-911106-45; ON: DE92004094
- Resource Relation:
- Conference: 1991 Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference,Santa Fe, NM (United States),2-9 Nov 1991; Other Information: PBD: Oct 1991
- Country of Publication:
- United States
- Language:
- English
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