Oriented lead zirconate titanate thin films: Characterization of film crystallization
Film processing temperature and time was varied to characterize the pyrochlore-to-perovskite crystallization of solution-derived PZT 20/80 thin films. 3000 {Angstrom} thick films were prepared by spin deposition using <100> single crystal MgO as substrate. By controlled rapid thermal processing, films at different stages in the perovskite crystallization process were prepared with the tetragonal PZT 20/80 phase being <100>/<001> oriented relative to the MgO surface. An activation energy for the conversion process of 326 kJ/mole was determined by use of an Arrhenius expression using rate constants found by application of the method of Avrami. Activation energy for formation of the PZT 20/80 perovskite phase of the solution-derived films compared favorably with that calculated from data by Kwok and Desu for sputter-deposited 3500 {Angstrom} thick PZT 55/45 films. Similarity in activation energies indicates that the energetics of the conversion process are not strongly dependent on the method used for film deposition.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10104972
- Report Number(s):
- SAND-92-2905C; CONF-930405-50; ON: DE94003104; BR: GB0103012
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society,San Francisco, CA (United States),12-16 Apr 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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