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Title: Competing effects of magnetocrystalline anisotropy and exchange bias in epitaxial Fe/IrMn bilayers

Journal Article · · Applied Physics Letters, 98(9):092503
DOI:https://doi.org/10.1063/1.3561516· OSTI ID:1009743

We systematically investigated the possible magnetization reversal behavior in well-characterized, epitaxial, Fe/IrMn exchange-biased bilayers as a function of the antiferromagnetic (AF) layer thickness. Several kinds of multi-step loops were observed for the samples measured at various field orientations. The angular dependence of the switching fields, observed using longitudinal and transverse magneto-optic Kerr effect (MOKE), were shown to depend on the competition between the magnetocrystalline anisotropy and the exchange bias (EB). A modified ‘effective field’ model was applied to quantitatively describe the evolution of the magnetic behavior and correctly predict the occurrence of different magnetic switching processes. The dependence of the effective anisotropy fields on the AF layer thickness directly reflects the competing effects of the pinned and rotatable antiferromagnetic spins at the EB interface.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1009743
Report Number(s):
PNNL-SA-78075; APPLAB; 43695; KP1704020; TRN: US201107%%849
Journal Information:
Applied Physics Letters, 98(9):092503, Vol. 98, Issue 9; ISSN 0003-6951
Country of Publication:
United States
Language:
English