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Title: The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6

Abstract

Magnetic properties of thin magnetic films are strongly affected by the nature of the interface between magnetic and non-magnetic layers. In spintronic devices the extent to which spins are scattered at an interface depends upon interfacial roughness, alloying, and impurities. We present a polarization-dependent XAFS study of a 1Pd/9Fe/GaAs(001)-(4 x 6) structure grown in situ in the MBE facility at the PNC/XOR, APS. To increase the interfacial roughness, the 1ML Pd was grown on the 9 ML Fe without first sputtering and annealing the Fe. An estimate of interfacial roughness, evidence for formation of Pd islands, their height, and the amount of As floating to the Pd surface from the GaAs are given.

Authors:
; ;  [1]
  1. (Simon)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1009005
Resource Type:
Conference
Resource Relation:
Conference: 13th International Conference on X-ray Absorption Fine Structure-XAFS13;9-14 July 2006;Stanford, California, USA
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; PALLADIUM; IRON; INTERFACES; GALLIUM ARSENIDES; THIN FILMS; IMPURITIES; MAGNETIC PROPERTIES; ROUGHNESS

Citation Formats

Budnik, P.S., Gordon, R.A., and Crozier, E.D. The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6. United States: N. p., 2007. Web.
Budnik, P.S., Gordon, R.A., & Crozier, E.D. The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6. United States.
Budnik, P.S., Gordon, R.A., and Crozier, E.D. Thu . "The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6". United States. doi:.
@article{osti_1009005,
title = {The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6},
author = {Budnik, P.S. and Gordon, R.A. and Crozier, E.D.},
abstractNote = {Magnetic properties of thin magnetic films are strongly affected by the nature of the interface between magnetic and non-magnetic layers. In spintronic devices the extent to which spins are scattered at an interface depends upon interfacial roughness, alloying, and impurities. We present a polarization-dependent XAFS study of a 1Pd/9Fe/GaAs(001)-(4 x 6) structure grown in situ in the MBE facility at the PNC/XOR, APS. To increase the interfacial roughness, the 1ML Pd was grown on the 9 ML Fe without first sputtering and annealing the Fe. An estimate of interfacial roughness, evidence for formation of Pd islands, their height, and the amount of As floating to the Pd surface from the GaAs are given.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 18 00:00:00 EST 2007},
month = {Thu Jan 18 00:00:00 EST 2007}
}

Conference:
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  • Magnetic properties of thin magnetic films are strongly affected by the nature of the interface between magnetic and non-magnetic layers. In spintronic devices the extent to which spins are scattered at an interface depends upon interfacial roughness, alloying, and impurities. We present a polarization-dependent XAFS study of a 1Pd/9Fe/GaAs(001)-(4x6) structure grown in situ in the MBE facility at the PNC/XOR, APS. To increase the interfacial roughness, the 1ML Pd was grown on the 9 ML Fe without first sputtering and annealing the Fe. An estimate of interfacial roughness, evidence for formation of Pd islands, their height, and the amount ofmore » As floating to the Pd surface from the GaAs are given.« less
  • Schottky barrier formation and thermal stability of the LaB/sub 6//GaAs(001) c (4 x 4) interface were investigated by x-ray photoelectron spectroscopy. Results show an excellent thermal stability without any appreciable interface reactions such as interdiffusion. Band bending induced by LaB/sub 6/ deposition is found to depend on the evaporation condition. However, the Fermi level pinning position does not change due to heat treatments between 300 and 700 /sup 0/C. This indicates that LaB/sub 6/ is a promising gate material for GaAs integrated circuits.
  • Thin Si epitaxial layers (1-14 monolayers) were fabricated by molecular beam epitaxy on GaAs(001) and AlAs(001) substrates also obtained by molecular beam epitaxy on GaAs(001) wafers. In situ studies by monochromatic x-ray photoemission show initial layer-by-layer Si growth on both substrates with only minor Si indiffusion. Reflection high energy electron diffraction analysis shows good epitaxy with some indication of three-dimensional growth at Si coverages higher than 4-8 monolayers. A comparison by the authors of their results with recent heterojunction theories suggests that the best predictions for the band offsets are obtained with the model solid approach using deformation potentials tomore » describe the effect of strain. The Si epitaxial layers are found to remain stable upon growth of AlAs or GaAs layers on top of the Si layers.« less
  • The structure, morphology, composition and electrical properties of ternary phase (Pd/sub x/GaAs) films on GaAs have been studied by transmission electron microscopy, energy dispersive x-ray spectrometry, Rutherford backscattering spectrometry and current-voltage measurements. Annealing 15 nm of Pd on (100) GaAs at 250/sup 0/C yields a planar monocrystalline film of the first ternary phase (approx.Pd/sub 3.9/Ga/sub 1.1/As/sub 0.9/) which is a rectifying contact to n-GaAs with a barrier height of approx.0.76 eV. A subsequent annealing treatment at 350/sup 0/C converts the film to a second ternary phase (approx.Pd/sub 3.3/Ga/sub 1.2/As/sub 0.8/) that exhibits a rough interface with GaAs, severely degraded electricalmore » properties and a lower barrier height. The reduction in the measured barrier height is attributed to thermionic-field emission at sharp corners and protrusions in the Pd/sub x/GaAs/GaAs interface. The implications of these results for the utilization of Pd in multielemental contacts to GaAs are also discussed.« less
  • We investigated by x-ray diffraction the Ga concentration dependences of the structural properties of Fe{sub 100-x}Ga{sub x} (galfenol) thin films grown on a ZnSe/GaAs(001) substrate, a material known for its high magnetostriction. By molecular beam epitaxy (MBE) we grew a series of (001)-oriented layers without in-plane misorientation, ranging from pure Fe up to x=29.4% Ga. We find a strong Ga-induced tetragonal distortion that conserves the pristine Fe in-plane lattice parameters for all Ga compositions. Supported by theoretical predictions [R. Wu, J. Appl. Phys. 91, 7358 (2002)], we attribute this unusual tetragonal distortion to short-range ordering of Ga-Ga pairs along themore » [001]-growth direction. The low-temperature and out-of-equilibrium MBE growth regime tends to stabilize a strong deformed tetragonal phase (up to c/a{approx}1.05 for x{approx}29%). This tetragonal structure is fully released by postgrowth annealing.« less