Phase transitions in the liquid-vapor interface of dilute alloys of Bi in Ga: New experimental studies
- UC
We report the results of measurements of x-ray reflectivity and grazing incidence x-ray diffraction from the liquid-vapor interfaces of four dilute alloys of Bi in Ga with mole fractions x{sub Bi} = 0.0032, 0.0023, 0.00037, and 0.000037. The monolayer coverage of the alloys with x{sub Bi} = 0.0023, and x{sub Bi} = 0.00037 is about 0.85 and only very slightly temperature dependent. The monolayer coverage in the lowest-concentration alloy, with x{sub Bi} = 0.000037, ranged from 0.82 at 29 C to 0.58 at 110 C. In none of these alloys, down to the lowest temperature used, 29 C, can we find any evidence for crystallization of the Bi monolayer that segregates as the outermost stratum of the liquid-vapor interface. Drawing on theoretical arguments we propose that the transitions inferred from the second-harmonic generation and plasma generation studies of dilute Bi in Ga alloys are from the liquid state to the hexatic state of the Bi monolayer. The data for the alloy with x{sub Bi} = 0.000037 suggest that near 80 C there is a disordered phase-to-disordered phase transition.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1008679
- Journal Information:
- J. Chem. Phys., Vol. 122, Issue (22) ; 2005; ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- ENGLISH
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