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Title: Surface x-ray-diffraction study and quantum well analysis of the growth and atomic-layer structure of ultrathin Pb/Si(111) films

Authors:
; ; ;  [1]
  1. UIUC
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1008649
Resource Type:
Journal Article
Journal Name:
Phys. Rev. B
Additional Journal Information:
Journal Volume: 72; Journal Issue: (3) ; 2005
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Czoschke, P, Hong, Hawoong, Basile, L, and Chiang, T -C. Surface x-ray-diffraction study and quantum well analysis of the growth and atomic-layer structure of ultrathin Pb/Si(111) films. United States: N. p., 2010. Web.
Czoschke, P, Hong, Hawoong, Basile, L, & Chiang, T -C. Surface x-ray-diffraction study and quantum well analysis of the growth and atomic-layer structure of ultrathin Pb/Si(111) films. United States.
Czoschke, P, Hong, Hawoong, Basile, L, and Chiang, T -C. Tue . "Surface x-ray-diffraction study and quantum well analysis of the growth and atomic-layer structure of ultrathin Pb/Si(111) films". United States.
@article{osti_1008649,
title = {Surface x-ray-diffraction study and quantum well analysis of the growth and atomic-layer structure of ultrathin Pb/Si(111) films},
author = {Czoschke, P and Hong, Hawoong and Basile, L and Chiang, T -C},
abstractNote = {},
doi = {},
journal = {Phys. Rev. B},
number = (3) ; 2005,
volume = 72,
place = {United States},
year = {2010},
month = {7}
}