Method for passivating crystal silicon surfaces
Patent
·
OSTI ID:1007940
- Littleton, CO
In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- Alliance For Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 7,629,236
- Application Number:
- 11/574,167
- OSTI ID:
- 1007940
- Country of Publication:
- United States
- Language:
- English
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