Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils
- Princeton
The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements [V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)-phase II ({beta}-tin structure)-liquid triple point. The triple point of phase XI (orthorhombic, Imma)-phase V (simple hexagonal)-liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1006867
- Journal Information:
- J. Phys. Chem. Solids, Vol. 69, Issue (9) ; 09, 2008; ISSN 0022-3697
- Country of Publication:
- United States
- Language:
- ENGLISH
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