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Title: Electroreflectance studies of stark-shifts and polarization-induced electric fields in InGaN/GaN single quantum wells.

Abstract

To observe the effects of polarization fields and screening, we have performed contacted electroreflectance (CER) measurements on In{sub 0.07}Ga{sub 0.93}N/GaN single quantum well light emitting diodes for different reverse bias voltages. Room-temperature CER spectra exhibited three features which are at lower energy than the GaN band gap and are associated with the quantum well. The position of the lowest-energy experimental peak, attributed to the ground-state quantum well transition, exhibited a limited Stark shift except at large reverse bias when a redshift in the peak energy was observed. Realistic band models of the quantum well samples were constructed using self-consistent Schroedinger-Poisson solutions, taking polarization and screening effects in the quantum well fully into account. The model predicts an initial blueshift in transition energy as reverse bias voltage is increased, due to the cancellation of the polarization electric field by the depletion region field and the associated shift due to the quantum-confined Stark effect. A redshift is predicted to occur as the applied field is further increased past the flatband voltage. While the data and the model are in reasonable agreement for voltages past the flatband voltage, they disagree for smaller values of reverse bias, when charge is stored in the quantummore » well, and no blueshift is observed experimentally. To eliminate the blueshift and screen the electric field, we speculate that electrons in the quantum well are trapped in localized states.« less

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
1005377
Report Number(s):
SAND2003-3589J
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US201105%%298
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in Journal of Applied Physics.; Journal Volume: 95; Journal Issue: 9
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CANCELLATION; ELECTRIC FIELDS; ELECTRONS; LIGHT EMITTING DIODES; POLARIZATION; QUANTUM WELLS; SCREENS; SPECTRA; STARK EFFECT

Citation Formats

Koleske, Daniel David, Kaplar, Robert James, Fischer, Arthur Joseph, and Kurtz, Steven Ross. Electroreflectance studies of stark-shifts and polarization-induced electric fields in InGaN/GaN single quantum wells.. United States: N. p., 2003. Web.
Koleske, Daniel David, Kaplar, Robert James, Fischer, Arthur Joseph, & Kurtz, Steven Ross. Electroreflectance studies of stark-shifts and polarization-induced electric fields in InGaN/GaN single quantum wells.. United States.
Koleske, Daniel David, Kaplar, Robert James, Fischer, Arthur Joseph, and Kurtz, Steven Ross. Mon . "Electroreflectance studies of stark-shifts and polarization-induced electric fields in InGaN/GaN single quantum wells.". United States. doi:.
@article{osti_1005377,
title = {Electroreflectance studies of stark-shifts and polarization-induced electric fields in InGaN/GaN single quantum wells.},
author = {Koleske, Daniel David and Kaplar, Robert James and Fischer, Arthur Joseph and Kurtz, Steven Ross},
abstractNote = {To observe the effects of polarization fields and screening, we have performed contacted electroreflectance (CER) measurements on In{sub 0.07}Ga{sub 0.93}N/GaN single quantum well light emitting diodes for different reverse bias voltages. Room-temperature CER spectra exhibited three features which are at lower energy than the GaN band gap and are associated with the quantum well. The position of the lowest-energy experimental peak, attributed to the ground-state quantum well transition, exhibited a limited Stark shift except at large reverse bias when a redshift in the peak energy was observed. Realistic band models of the quantum well samples were constructed using self-consistent Schroedinger-Poisson solutions, taking polarization and screening effects in the quantum well fully into account. The model predicts an initial blueshift in transition energy as reverse bias voltage is increased, due to the cancellation of the polarization electric field by the depletion region field and the associated shift due to the quantum-confined Stark effect. A redshift is predicted to occur as the applied field is further increased past the flatband voltage. While the data and the model are in reasonable agreement for voltages past the flatband voltage, they disagree for smaller values of reverse bias, when charge is stored in the quantum well, and no blueshift is observed experimentally. To eliminate the blueshift and screen the electric field, we speculate that electrons in the quantum well are trapped in localized states.},
doi = {},
journal = {Proposed for publication in Journal of Applied Physics.},
number = 9,
volume = 95,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2003},
month = {Mon Sep 01 00:00:00 EDT 2003}
}