Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Journal Article · Fri Dec 12 00:00:00 EST 2008 · Mater. Sci. Forum

DOI:https://doi.org/10.4028/0-87849-357-3.549· OSTI ID:1005242

Chen, Yi; Balaji, R; Dudley, Michael; Murthy, Madhu; Maximenko, Serguei I; Freitas, Jamie A

Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and grazing-incidence Synchrotron White Beam X-ray Topography. Images of low angle grain boundaries on the PL images correlate well with SWBXT observations, and similar correlation can be established for some micropipe images although the latter is complicated by the overall level of distortion and misorientation associated with the low angle grain boundaries and the fact that many of the micropipes are located in or close to the boundaries. This validation indicates that PL imaging may provide a rapid way of imaging such defect structures in large-scale SiC wafers.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE
• OSTI ID: 1005242
• Journal Information: Mater. Sci. Forum, Vol. 600-603, Issue 2009; Conference: Otsu, Japan; ISSN 0255--5476
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

43 PARTICLE ACCELERATORS
COMPARATIVE EVALUATIONS
DEFECTS
GRAIN BOUNDARIES
MICROSTRUCTURE
PHOTOLUMINESCENCE
SILICON CARBIDES
SYNCHROTRON RADIATION
TOPOGRAPHY
VALIDATION
X-RAY DIFFRACTION