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Title: Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.

Abstract

A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO{sub 3}) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO{sub 2}) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconate titanate (PLZT). The robust, highly crystalline SrRuO{sub 3} film fabrication process does not favor the formation of RuO{sub 2} because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under nonisothermal conditions, with which the activation energies to form RuO{sub 2} and SrRuO{sub 3} were calculated to be 156 {+-} 17 and 96 {+-} 10 kJ/mol, respectively. The room-temperature resistivity of the SrRuO{sub 3} film was measured to be 850 {+-} 50 {mu}{Omega} cm on silicon (100) substrates. The dielectric properties of sol-gel-derived PLZT thin film capacitors on polycrystalline SrRuO{sub 3} electrodes were also measured to illustrate the high quality of the formed SrRuO{sub 3} bottom electrode. These results have broad implications for the expanded use of these conductive oxide electrodes in many applications that require low thermal budgets. The PLZT (8/52/48) films exhibited well-defined hysteresis loopsmore » with remanent polarization of {approx}10.5 {micro}C/cm{sup 2}, dielectric constant of >1450, dielectric loss of <0.06, and leakage current density of {approx}3.8 x 10{sup -8} A/cm{sup 2}. These dielectric properties are similar to those of PLZT on platinized silicon, indicating the high quality of the bottom conductive oxide layer. In addition, the PLZT capacitors were essentially fatigue free for >1 x 10{sup 9} cycles when deposited over an oxide electrode.« less

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
EE
OSTI Identifier:
1004856
Report Number(s):
ANL/ES/JA-67563
Journal ID: 0897-4756; TRN: US201104%%1140
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Chem. Mater.
Additional Journal Information:
Journal Volume: 23; Journal Issue: Jan. 2011
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRODES; FERROELECTRIC MATERIALS; LANTHANUM; LEAKAGE CURRENT; MELTING POINTS; POLARIZATION; RUTHENIUM OXIDES; SILICON; STRONTIUM; SYNTHESIS; THERMODYNAMICS; THIN FILMS; TITANATES; ZIRCONATES

Citation Formats

Narayanan, M, Tong, S, Koritala, R, Ma, B, Pol, V, and Balachandran, U. Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.. United States: N. p., 2011. Web. doi:10.1021/cm102136f.
Narayanan, M, Tong, S, Koritala, R, Ma, B, Pol, V, & Balachandran, U. Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.. United States. doi:10.1021/cm102136f.
Narayanan, M, Tong, S, Koritala, R, Ma, B, Pol, V, and Balachandran, U. Sat . "Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.". United States. doi:10.1021/cm102136f.
@article{osti_1004856,
title = {Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.},
author = {Narayanan, M and Tong, S and Koritala, R and Ma, B and Pol, V and Balachandran, U},
abstractNote = {A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO{sub 3}) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO{sub 2}) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconate titanate (PLZT). The robust, highly crystalline SrRuO{sub 3} film fabrication process does not favor the formation of RuO{sub 2} because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under nonisothermal conditions, with which the activation energies to form RuO{sub 2} and SrRuO{sub 3} were calculated to be 156 {+-} 17 and 96 {+-} 10 kJ/mol, respectively. The room-temperature resistivity of the SrRuO{sub 3} film was measured to be 850 {+-} 50 {mu}{Omega} cm on silicon (100) substrates. The dielectric properties of sol-gel-derived PLZT thin film capacitors on polycrystalline SrRuO{sub 3} electrodes were also measured to illustrate the high quality of the formed SrRuO{sub 3} bottom electrode. These results have broad implications for the expanded use of these conductive oxide electrodes in many applications that require low thermal budgets. The PLZT (8/52/48) films exhibited well-defined hysteresis loops with remanent polarization of {approx}10.5 {micro}C/cm{sup 2}, dielectric constant of >1450, dielectric loss of <0.06, and leakage current density of {approx}3.8 x 10{sup -8} A/cm{sup 2}. These dielectric properties are similar to those of PLZT on platinized silicon, indicating the high quality of the bottom conductive oxide layer. In addition, the PLZT capacitors were essentially fatigue free for >1 x 10{sup 9} cycles when deposited over an oxide electrode.},
doi = {10.1021/cm102136f},
journal = {Chem. Mater.},
number = Jan. 2011,
volume = 23,
place = {United States},
year = {2011},
month = {1}
}