Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells.
Journal Article
·
· Proposed for publication in Applied Physics Letters.
OSTI ID:1003913
- Princeton University, Princeton, NJ
- Bell Labs, Lucent Technologies, Murray Hill, NJ
Cyclotron resonance at the microwave frequency is used to measure the band edge mass (m{sub b}) in the two-dimensional hole (2DH) system, confined in 30 nm quantum wells in the Al{sub 0.1}Ga{sub 0.9}As/GaAs/Al{sub 0.1}Ga{sub 0.9}As heterostructures. We find that for 2DH density p {le} 1.0 x 10{sup 10} cm{sup -2}, m{sub b} is nearly constant, {approx}0.35m{sub e}. It increases with increasing density, to {approx}0.5m{sub e} at p = 7.4 x 10{sup 10} cm{sup -2}.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1003913
- Report Number(s):
- SAND2003-2899J; APPLAB; TRN: US1100556
- Journal Information:
- Proposed for publication in Applied Physics Letters., Vol. 83, Issue 17; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation
Room-temperature threshold-current dependence of GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers on x and active-layer thickness
Journal Article
·
Mon Apr 18 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:1003913
+2 more
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation
Journal Article
·
Sat Dec 15 00:00:00 EST 2018
· Semiconductors
·
OSTI ID:1003913
+4 more
Room-temperature threshold-current dependence of GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers on x and active-layer thickness
Journal Article
·
Sat Jul 01 00:00:00 EDT 1978
· J. Appl. Phys.; (United States)
·
OSTI ID:1003913