skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The Control of Electron Transport Related Defects in In Situ Fabricated Single Wall Carbon Nanotube Devices

Abstract

Metallic single wall carbon nanotube devices were characterized using low temperature transport measurements to study how the growth conditions affect defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron beam lithography. The authors present experimental evidence that defect formation in carbon nanotubes, in addition to the well known growth temperature dependence, is also affected by the nature and the composition of the carbon growth gases.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1003635
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 13
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON; CATALYSTS; DEFECTS; ELECTRODES; ELECTRON BEAMS; ELECTRONS; GASES; ISLANDS; MOLECULAR BEAMS; NANOTUBES; TEMPERATURE DEPENDENCE; TRANSPORT

Citation Formats

Zhou, Zhixian, Jin, Rongying, Eres, Gyula, Subedi, Alaska P, and Mandrus, David. The Control of Electron Transport Related Defects in In Situ Fabricated Single Wall Carbon Nanotube Devices. United States: N. p., 2006. Web. doi:10.1063/1.2354450.
Zhou, Zhixian, Jin, Rongying, Eres, Gyula, Subedi, Alaska P, & Mandrus, David. The Control of Electron Transport Related Defects in In Situ Fabricated Single Wall Carbon Nanotube Devices. United States. doi:10.1063/1.2354450.
Zhou, Zhixian, Jin, Rongying, Eres, Gyula, Subedi, Alaska P, and Mandrus, David. Sun . "The Control of Electron Transport Related Defects in In Situ Fabricated Single Wall Carbon Nanotube Devices". United States. doi:10.1063/1.2354450.
@article{osti_1003635,
title = {The Control of Electron Transport Related Defects in In Situ Fabricated Single Wall Carbon Nanotube Devices},
author = {Zhou, Zhixian and Jin, Rongying and Eres, Gyula and Subedi, Alaska P and Mandrus, David},
abstractNote = {Metallic single wall carbon nanotube devices were characterized using low temperature transport measurements to study how the growth conditions affect defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron beam lithography. The authors present experimental evidence that defect formation in carbon nanotubes, in addition to the well known growth temperature dependence, is also affected by the nature and the composition of the carbon growth gases.},
doi = {10.1063/1.2354450},
journal = {Applied Physics Letters},
number = 13,
volume = 89,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}