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Title: LOW TEMPERATURE PLASMA ETCHING OF COPPER FOR MINIMIZING SIZE EFFECTS IN SUB-100 NM FEATURES

Abstract

A low temperature plasma etching process for patterning copper interconnects is proposed as a solution to the size effect issue in the resistivity of copper. Key features of this etching process based on a previous thermochemical analysis of the Cu-Cl-H system are discussed. Potential benefits of a subtractive etching scheme based on this process in comparison with the damascene scheme for copper-based interconnect processing in sub-100 nm features are presented in the context of the ITRS roadmap. Preliminary experimental work on plasma etching of Cu thin films using the proposed process is discussed.

Authors:
 [1];  [2];  [2];  [1];  [2]
  1. ORNL
  2. Georgia Institute of Technology
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1003523
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: 2006 Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA, 20060417, 20060421
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COPPER; ETCHING; PLASMA; PROCESSING; THIN FILMS; plasma; copper; size effects; thin films

Citation Formats

Kulkarni, Nagraj S, Tamirisa, Prabhakar, Levitin, Galit, Kasica, Richard J, and Hess, Dennis W. LOW TEMPERATURE PLASMA ETCHING OF COPPER FOR MINIMIZING SIZE EFFECTS IN SUB-100 NM FEATURES. United States: N. p., 2006. Web.
Kulkarni, Nagraj S, Tamirisa, Prabhakar, Levitin, Galit, Kasica, Richard J, & Hess, Dennis W. LOW TEMPERATURE PLASMA ETCHING OF COPPER FOR MINIMIZING SIZE EFFECTS IN SUB-100 NM FEATURES. United States.
Kulkarni, Nagraj S, Tamirisa, Prabhakar, Levitin, Galit, Kasica, Richard J, and Hess, Dennis W. Sun . "LOW TEMPERATURE PLASMA ETCHING OF COPPER FOR MINIMIZING SIZE EFFECTS IN SUB-100 NM FEATURES". United States. doi:.
@article{osti_1003523,
title = {LOW TEMPERATURE PLASMA ETCHING OF COPPER FOR MINIMIZING SIZE EFFECTS IN SUB-100 NM FEATURES},
author = {Kulkarni, Nagraj S and Tamirisa, Prabhakar and Levitin, Galit and Kasica, Richard J and Hess, Dennis W},
abstractNote = {A low temperature plasma etching process for patterning copper interconnects is proposed as a solution to the size effect issue in the resistivity of copper. Key features of this etching process based on a previous thermochemical analysis of the Cu-Cl-H system are discussed. Potential benefits of a subtractive etching scheme based on this process in comparison with the damascene scheme for copper-based interconnect processing in sub-100 nm features are presented in the context of the ITRS roadmap. Preliminary experimental work on plasma etching of Cu thin films using the proposed process is discussed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}

Conference:
Other availability
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