Low Dielectric Losses in Annealed Ti-Doped K(Ta,Nb)O3 Thin Films Grown by Pulsed Laser Deposition
- University of Florida, Gainesville
- University of Florida
- ORNL
We have investigated the dielectric properties of Ti-doped K(Ta,Nb)O{sub 3} films subjected to high temperature annealing. Titanium (+4) substitution on the Nb/Ta site introduces an acceptor state, thus reducing dielectric losses due to defect-related donor states. Using 3% Ti-doped targets, K(Ta,Nb)O{sub 3}: Ti films were grown on MgO (001) crystals by pulsed-laser deposition. The films were annealed in oxygen at temperatures as high as 1000 C. A loss tangent of 0.002 at room temperature was observed for annealed Ti-doped K(Ta,Nb)O{sub 3} thin films. A reduction in tunability was also seen. For these annealed films, the dielectric loss shows little temperature dependence, indicating a significant reduction in donor density due to defects.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1003452
- Journal Information:
- Journal of Physics D: Applied Physics, Vol. 38, Issue 9; ISSN 0022--3727
- Country of Publication:
- United States
- Language:
- English
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