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Title: Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy

Abstract

The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is developed as a quantitative tool for real-space imaging of imprint, coercive bias, remanent and saturation responses, and domain nucleation voltage on the nanoscale. Examples of SS-PFM implementation, data analysis, and data visualization are presented for epitaxial lead zirconate titanate (PZT) thin films and polycrystalline PZT ceramics. Several common artifacts related to the measurement method, environmental factors, and instrument settings are analyzed.

Authors:
 [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1003336
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 77; Journal Issue: 7
Country of Publication:
United States
Language:
English

Citation Formats

Jesse, Stephen, Lee, Ho Nyung, and Kalinin, Sergei V. Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy. United States: N. p., 2006. Web. doi:10.1063/1.2214699.
Jesse, Stephen, Lee, Ho Nyung, & Kalinin, Sergei V. Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy. United States. doi:10.1063/1.2214699.
Jesse, Stephen, Lee, Ho Nyung, and Kalinin, Sergei V. Sun . "Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy". United States. doi:10.1063/1.2214699.
@article{osti_1003336,
title = {Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy},
author = {Jesse, Stephen and Lee, Ho Nyung and Kalinin, Sergei V},
abstractNote = {The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is developed as a quantitative tool for real-space imaging of imprint, coercive bias, remanent and saturation responses, and domain nucleation voltage on the nanoscale. Examples of SS-PFM implementation, data analysis, and data visualization are presented for epitaxial lead zirconate titanate (PZT) thin films and polycrystalline PZT ceramics. Several common artifacts related to the measurement method, environmental factors, and instrument settings are analyzed.},
doi = {10.1063/1.2214699},
journal = {Review of Scientific Instruments},
number = 7,
volume = 77,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}