Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy

Journal Article · Sun Jan 01 00:00:00 EST 2006 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.2214699· OSTI ID:1003336

Jesse, Stephen ^[1]; Lee, Ho Nyung ^[1]; Kalinin, Sergei V ^[1]

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1. ORNL

The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is developed as a quantitative tool for real-space imaging of imprint, coercive bias, remanent and saturation responses, and domain nucleation voltage on the nanoscale. Examples of SS-PFM implementation, data analysis, and data visualization are presented for epitaxial lead zirconate titanate (PZT) thin films and polycrystalline PZT ceramics. Several common artifacts related to the measurement method, environmental factors, and instrument settings are analyzed.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1003336
• Journal Information: Review of Scientific Instruments, Vol. 77, Issue 7; ISSN 0034-6748
• Country of Publication: United States
• Language: English