skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Buffer Layer-Assisted Growth of Ge Nanoclusters on Si

Abstract

In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of?an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties.

Authors:
 [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1003272
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nanoscale Research Letters; Journal Volume: 1; Journal Issue: 1
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMS; BUFFERS; FABRICATION; FREE ENERGY; NANOSTRUCTURES; SUBSTRATES; XENON

Citation Formats

Li, An-Ping, and Wendelken, J F. Buffer Layer-Assisted Growth of Ge Nanoclusters on Si. United States: N. p., 2006. Web. doi:10.1007/s11671-006-9011-y.
Li, An-Ping, & Wendelken, J F. Buffer Layer-Assisted Growth of Ge Nanoclusters on Si. United States. doi:10.1007/s11671-006-9011-y.
Li, An-Ping, and Wendelken, J F. Sun . "Buffer Layer-Assisted Growth of Ge Nanoclusters on Si". United States. doi:10.1007/s11671-006-9011-y.
@article{osti_1003272,
title = {Buffer Layer-Assisted Growth of Ge Nanoclusters on Si},
author = {Li, An-Ping and Wendelken, J F},
abstractNote = {In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of?an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties.},
doi = {10.1007/s11671-006-9011-y},
journal = {Nanoscale Research Letters},
number = 1,
volume = 1,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}