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Title: Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect

Abstract

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn{sub 5}Ge{sub 3}. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about -240 K (0.8T{sub c}).

Authors:
 [1];  [2];  [3];  [4]
  1. University of Tennessee, Knoxville (UTK) & Oak Ridge National Laboratory (ORNL)
  2. Chinese Academy of Sciences
  3. University of Texas, Austin
  4. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1003244
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 96; Journal Issue: 3
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FERROMAGNETIC MATERIALS; FLUCTUATIONS; GERMANIUM; HALL EFFECT; MAGNETIZATION; MANGANESE; SPIN ORIENTATION; THIN FILMS

Citation Formats

Zeng, C., Yao, Y., Niu, Q., and Weitering, Harm H. Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect. United States: N. p., 2006. Web. doi:10.1103/PhysRevLett.96.037204.
Zeng, C., Yao, Y., Niu, Q., & Weitering, Harm H. Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect. United States. doi:10.1103/PhysRevLett.96.037204.
Zeng, C., Yao, Y., Niu, Q., and Weitering, Harm H. Sun . "Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect". United States. doi:10.1103/PhysRevLett.96.037204.
@article{osti_1003244,
title = {Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect},
author = {Zeng, C. and Yao, Y. and Niu, Q. and Weitering, Harm H},
abstractNote = {The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn{sub 5}Ge{sub 3}. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about -240 K (0.8T{sub c}).},
doi = {10.1103/PhysRevLett.96.037204},
journal = {Physical Review Letters},
number = 3,
volume = 96,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
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