Pressure-induced bonding and compound formation in xenon-hydrogen solids
Abstract
Closed electron shell systems, such as hydrogen, nitrogen or group 18 elements, can form weakly bound stoichiometric compounds at high pressures. An understanding of the stability of these van der Waals compounds is lacking, as is information on the nature of their interatomic interactions. We describe the formation of a stable compound in the Xe-H{sub 2} binary system, revealed by a suite of X-ray diffraction and optical spectroscopy measurements. At 4.8 GPa, a unique hydrogen-rich structure forms that can be viewed as a tripled solid hydrogen lattice modulated by layers of xenon, consisting of xenon dimers. Varying the applied pressure tunes the Xe-Xe distances in the solid over a broad range from that of an expanded xenon lattice to the distances observed in metallic xenon at megabar pressures. Infrared and Raman spectra indicate a weakening of the intramolecular covalent bond as well as persistence of semiconducting behaviour in the compound to at least 255 GPa.
- Authors:
-
- CIW
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1002244
- Resource Type:
- Journal Article
- Journal Name:
- Nature Chemistry
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 01, 2010; Journal ID: ISSN 1755-4330
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 08 HYDROGEN; BONDING; DIMERS; ELECTRONS; HYDROGEN; NITROGEN; RAMAN SPECTRA; SPECTROSCOPY; STABILITY; XENON; X-RAY DIFFRACTION
Citation Formats
Somayazulu, Maddury, Dera, Przemyslaw, Goncharov, Alexander F, Gramsch, Stephen A, Liermann, Peter, Yang, Wenge, Liu, Zhenxian, Mao, Ho-kwang, Hemley, Russell J, and UC). Pressure-induced bonding and compound formation in xenon-hydrogen solids. United States: N. p., 2010.
Web. doi:10.1038/nchem.445.
Somayazulu, Maddury, Dera, Przemyslaw, Goncharov, Alexander F, Gramsch, Stephen A, Liermann, Peter, Yang, Wenge, Liu, Zhenxian, Mao, Ho-kwang, Hemley, Russell J, & UC). Pressure-induced bonding and compound formation in xenon-hydrogen solids. United States. https://doi.org/10.1038/nchem.445
Somayazulu, Maddury, Dera, Przemyslaw, Goncharov, Alexander F, Gramsch, Stephen A, Liermann, Peter, Yang, Wenge, Liu, Zhenxian, Mao, Ho-kwang, Hemley, Russell J, and UC). 2010.
"Pressure-induced bonding and compound formation in xenon-hydrogen solids". United States. https://doi.org/10.1038/nchem.445.
@article{osti_1002244,
title = {Pressure-induced bonding and compound formation in xenon-hydrogen solids},
author = {Somayazulu, Maddury and Dera, Przemyslaw and Goncharov, Alexander F and Gramsch, Stephen A and Liermann, Peter and Yang, Wenge and Liu, Zhenxian and Mao, Ho-kwang and Hemley, Russell J and UC)},
abstractNote = {Closed electron shell systems, such as hydrogen, nitrogen or group 18 elements, can form weakly bound stoichiometric compounds at high pressures. An understanding of the stability of these van der Waals compounds is lacking, as is information on the nature of their interatomic interactions. We describe the formation of a stable compound in the Xe-H{sub 2} binary system, revealed by a suite of X-ray diffraction and optical spectroscopy measurements. At 4.8 GPa, a unique hydrogen-rich structure forms that can be viewed as a tripled solid hydrogen lattice modulated by layers of xenon, consisting of xenon dimers. Varying the applied pressure tunes the Xe-Xe distances in the solid over a broad range from that of an expanded xenon lattice to the distances observed in metallic xenon at megabar pressures. Infrared and Raman spectra indicate a weakening of the intramolecular covalent bond as well as persistence of semiconducting behaviour in the compound to at least 255 GPa.},
doi = {10.1038/nchem.445},
url = {https://www.osti.gov/biblio/1002244},
journal = {Nature Chemistry},
issn = {1755-4330},
number = 01, 2010,
volume = 2,
place = {United States},
year = {Wed Nov 03 00:00:00 EDT 2010},
month = {Wed Nov 03 00:00:00 EDT 2010}
}