Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

doi:https://doi.org/10.1016/j.nimb.2010.05.090

Title: Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

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Abstract

Wurtzite undoped GaN epilayers (0 0 0 1) was implanted with 500 keV Au+ ions at room temperature under different doses, respectively. Ion implantation was performed through photoresist masks on GaN to produce alternating strips. The experimental results showed that the step height of swelling and decomposition in implanted GaN depended on ion dose and annealing temperature, i.e., damage level and its evolution. This damage evolution is contributed to implantation-induced defect production, and defect migration/accumulation occurred at different levels of displacement per atom. The results suggest that the swelling is due to the formation of porous structures in the amorphous region of implanted GaN. The decomposition of implanted area can be attributed to the disorder saturation and the diffusion of surface amorphous layer.

Authors:: Gao, Yuan; Lan, Chune; Xue, Jianming; Yan, Sha; Wang, Yugang; Xu, Fujun; Shen, Bo; Zhang, Yanwen

Publication Date:: 2010-06-08

Research Org.:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1002167

Report Number(s):: PNNL-SA-77126
KP1704020; TRN: US201102%%618

DOE Contract Number:: AC05-76RL01830

Resource Type:: Journal Article

Journal Name:: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 268(19):3207-3210

Additional Journal Information:: Journal Volume: 268; Journal Issue: 19

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ANNEALING; DEFECTS; DIFFUSION; HEAVY IONS; ION IMPLANTATION; PRODUCTION; SATURATION; SWELLING; GaN; implantation; swelling; erosion; defects

Citation Formats


                    Gao, Yuan, Lan, Chune, Xue, Jianming, Yan, Sha, Wang, Yugang, Xu, Fujun, Shen, Bo, and Zhang, Yanwen. Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation.  United States: N. p., 2010. 
        Web.  doi:10.1016/j.nimb.2010.05.090.

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                    Gao, Yuan, Lan, Chune, Xue, Jianming, Yan, Sha, Wang, Yugang, Xu, Fujun, Shen, Bo, & Zhang, Yanwen. Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation.  United States.  https://doi.org/10.1016/j.nimb.2010.05.090

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                    Gao, Yuan, Lan, Chune, Xue, Jianming, Yan, Sha, Wang, Yugang, Xu, Fujun, Shen, Bo, and Zhang, Yanwen. Tue .  
        "Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation".  United States.  https://doi.org/10.1016/j.nimb.2010.05.090.

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@article{osti_1002167,

  title        = {Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation},

  author       = {Gao, Yuan and Lan, Chune and Xue, Jianming and Yan, Sha and Wang, Yugang and Xu, Fujun and Shen, Bo and Zhang, Yanwen},

  abstractNote = {Wurtzite undoped GaN epilayers (0 0 0 1) was implanted with 500 keV Au+ ions at room temperature under different doses, respectively. Ion implantation was performed through photoresist masks on GaN to produce alternating strips. The experimental results showed that the step height of swelling and decomposition in implanted GaN depended on ion dose and annealing temperature, i.e., damage level and its evolution. This damage evolution is contributed to implantation-induced defect production, and defect migration/accumulation occurred at different levels of displacement per atom. The results suggest that the swelling is due to the formation of porous structures in the amorphous region of implanted GaN. The decomposition of implanted area can be attributed to the disorder saturation and the diffusion of surface amorphous layer.},

  doi          = {10.1016/j.nimb.2010.05.090},

  url          = {https://www.osti.gov/biblio/1002167},
  journal      = {Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 268(19):3207-3210},
number       = 19,

  volume       = 268,

  place        = {United States},

  year         = {2010},

  month        = {6}

}

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https://doi.org/10.1016/j.nimb.2010.05.090

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