Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Al-based microchannel structures.
Al-based high-aspect-ratio microscale structures (HARMS) are basic building blocks for all-Al microdevices. Bonding of Al-based HARMS is essential for device assembly. In this paper, bonding of Al-based HARMS to flat Al plates using Al-Ge thin film intermediate layers is investigated. The structure of sputter codeposited Al-Ge thin films was studied by high-resolution transmission electron microscopy as a function of the average film composition. The structure of the interface region between Al-based HARMS bonded to flat Al plates is studied by combining focused ion beam sectioning and scanning electron microscopy. An extended bonding interface region, {approx}100 {micro}m in width, is observed and suggested to result from liquidus/solidus reactions as well as diffusion of Ge in solid Al at the bonding temperature of 500 C. The extended interface region is suggested to be beneficial to Al-Al bonding via Al-Ge intermediate layers.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); Louisiana Board of Regents
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 1000697
- Report Number(s):
- ANL/MSD/JA-68803; TRN: US201101%%477
- Journal Information:
- J. Mater. Res., Vol. 24, Issue 2 ; Feb. 2009
- Country of Publication:
- United States
- Language:
- ENGLISH
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