Method for producing high carrier concentration p-Type transparent conducting oxides
Patent
·
OSTI ID:986579
- Evergreen, CO
- Littleton, CO
- Golden, CO
- Conifer, CO
- Westminster, CO
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Alliance For Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 7,517,784
- Application Number:
- 10/553,245; TRN: US201018%%45
- OSTI ID:
- 986579
- Country of Publication:
- United States
- Language:
- English
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