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Title: Thin Silicon MEMS Contact-Stress Sensor

Conference ·
OSTI ID:984646

This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
984646
Report Number(s):
LLNL-PROC-433955; TRN: US201016%%1413
Resource Relation:
Conference: Presented at: Hilton Head Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head, SC, United States, Jun 06 - Jun 10, 2010
Country of Publication:
United States
Language:
English

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