Using nanoscale transistors to measure single donor spins in semiconductors
Conference
·
OSTI ID:965791
We propose a technique for measuring the state of a single donor electron spin usinga field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is faciltated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outlne experimental reqiurements. Our measurement provides a single-shot, projective, and quantum non-demoltion measurement of an electron-encoded qubit state.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Accelerator& Fusion Research Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 965791
- Report Number(s):
- LBNL-2199E; TRN: US200919%%728
- Resource Relation:
- Conference: Quantum Communication, Measurement and Computing (QCMC), The Ninth International Conference, 2008, Calgary, Canada, 19-24 August 2008
- Country of Publication:
- United States
- Language:
- English
Similar Records
Towards quantum information processing with impurity spins insilicon
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.
Universal quantum computation using exchange interactions and measurements of single- and two-spin observables
Conference
·
Mon Mar 01 00:00:00 EST 2004
·
OSTI ID:965791
+3 more
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.
Conference
·
Wed Oct 01 00:00:00 EDT 2008
·
OSTI ID:965791
+10 more
Universal quantum computation using exchange interactions and measurements of single- and two-spin observables
Journal Article
·
Thu May 01 00:00:00 EDT 2003
· Physical Review. A
·
OSTI ID:965791