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Title: Point Defect Characterization in CdZnTe

Abstract

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
Doe - National Nuclear Security Administration
OSTI Identifier:
950451
Report Number(s):
BNL-82075-2009-CP
R&D Project: 10406; NN2001000; TRN: US0901985
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Conference
Resource Relation:
Conference: IEEE Dresden 2008; Dresden, Germany; 20081019 through 20081025
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CADMIUM TELLURIDES; ZINC TELLURIDES; POINT DEFECTS; CDTE SEMICONDUCTOR DETECTORS; PERFORMANCE TESTING; CORRELATIONS

Citation Formats

Gul, R, Li, Z, Bolotnikov, A, Keeter, K, Rodriguez, R, and James, R. Point Defect Characterization in CdZnTe. United States: N. p., 2009. Web.
Gul, R, Li, Z, Bolotnikov, A, Keeter, K, Rodriguez, R, & James, R. Point Defect Characterization in CdZnTe. United States.
Gul, R, Li, Z, Bolotnikov, A, Keeter, K, Rodriguez, R, and James, R. 2009. "Point Defect Characterization in CdZnTe". United States. https://www.osti.gov/servlets/purl/950451.
@article{osti_950451,
title = {Point Defect Characterization in CdZnTe},
author = {Gul, R and Li, Z and Bolotnikov, A and Keeter, K and Rodriguez, R and James, R},
abstractNote = {Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.},
doi = {},
url = {https://www.osti.gov/biblio/950451}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2009},
month = {Tue Mar 24 00:00:00 EDT 2009}
}

Conference:
Other availability
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