Point Defect Characterization in CdZnTe
Abstract
Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.
- Authors:
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- Doe - National Nuclear Security Administration
- OSTI Identifier:
- 950451
- Report Number(s):
- BNL-82075-2009-CP
R&D Project: 10406; NN2001000; TRN: US0901985
- DOE Contract Number:
- DE-AC02-98CH10886
- Resource Type:
- Conference
- Resource Relation:
- Conference: IEEE Dresden 2008; Dresden, Germany; 20081019 through 20081025
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CADMIUM TELLURIDES; ZINC TELLURIDES; POINT DEFECTS; CDTE SEMICONDUCTOR DETECTORS; PERFORMANCE TESTING; CORRELATIONS
Citation Formats
Gul, R, Li, Z, Bolotnikov, A, Keeter, K, Rodriguez, R, and James, R. Point Defect Characterization in CdZnTe. United States: N. p., 2009.
Web.
Gul, R, Li, Z, Bolotnikov, A, Keeter, K, Rodriguez, R, & James, R. Point Defect Characterization in CdZnTe. United States.
Gul, R, Li, Z, Bolotnikov, A, Keeter, K, Rodriguez, R, and James, R. 2009.
"Point Defect Characterization in CdZnTe". United States. https://www.osti.gov/servlets/purl/950451.
@article{osti_950451,
title = {Point Defect Characterization in CdZnTe},
author = {Gul, R and Li, Z and Bolotnikov, A and Keeter, K and Rodriguez, R and James, R},
abstractNote = {Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.},
doi = {},
url = {https://www.osti.gov/biblio/950451},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2009},
month = {Tue Mar 24 00:00:00 EDT 2009}
}