Electromigration-induced plasticity and texture in Cu interconnects
Plastic deformation has been observed in damascene Cu interconnect test structures during an in-situ electromigration experiment and before the onset of visible microstructural damage (ie. voiding) using a synchrotron technique of white beam X-ray microdiffraction. We show here that the extent of this electromigration-induced plasticity is dependent on the texture of the Cu grains in the line. In lines with strong <111> textures, the extent of plastic deformation is found to be relatively large compared to our plasticity results in the previous study [1] using another set of Cu lines with weaker textures. This is consistent with our earlier observation that the occurrence of plastic deformation in a given grain can be strongly correlated with the availability of a <112> direction of the crystal in the proximity of the direction of the electron flow in the line (within an angle of 10{sup o}). In <111> out-of-plane oriented grains in a damascene interconnect scheme, the crystal plane facing the sidewall tends to be a {l_brace}110{r_brace} plane,[2-4] so as to minimize interfacial energy. Therefore, it is deterministic rather than probabilistic that the <111> grains will have a <112> direction nearly parallel to the direction of electron flow. Thus, strong <111> textures lead to more plasticity, as we observe.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 934959
- Report Number(s):
- LBNL-521E; TRN: US0804023
- Resource Relation:
- Conference: Stress Workshop 2007, Kyoto, Japan, April 4-6, 2007; Related Information: Journal Publication Date: 10/31/2007
- Country of Publication:
- United States
- Language:
- English
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