Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping
The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, 21 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe - National Nuclear Security Administration
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 934456
- Report Number(s):
- BNL-81256-2008-CP; R&D Project: 10514; NN2001030; TRN: US0803750
- Resource Relation:
- Conference: SORMA 2008 Conference; Berkeley, CA; 20080601 through 20080605
- Country of Publication:
- United States
- Language:
- English
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