TE INCLUSIONS AND THEIR RELATIONSHIP TO THE PERFORMANCE OF CDZNTE DETECTORS.
Te-rich secondary phases existing in CdZnTe (CZT) single crystals degrade the spectroscopic performance of these detectors. An unpredictable number of charges are trapped, corresponding to the abundance of these microscopic defects, thereby leading to fluctuations in the total collected charge and strongly affecting the uniformity of charge-collection efficiency. These effects, observed in thin planar detectors, also were found to be the dominant cause of the low performance of thick detectors, wherein the fluctuations accumulate along the charge's drift path. Reducing the size of Te inclusions from a virtual diameter of 10-20 {micro}m down to less than 5 {micro}m already allowed us to produce Frisch-ring detectors with a resolution as good as {approx}0.8% FWHM at 662 keV: Understanding and modeling the mechanisms involving Te-rich secondary phases and charge loss requires systematic studies on a spatial scale never before realized. Here, we describe a dedicated beam-line recently established at BNL's National Synchrotron Light Source for characterizing semiconductor detectors along with a IR system with counting capability that permits us to correlate the concentration of defects with the devices' performances.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- DOE/NNSA
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 893015
- Report Number(s):
- BNL-77034-2006-CP; R&D Project: 10517; 2001050; TRN: US0605920
- Resource Relation:
- Conference: SPIE, HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VIII; SAN DIEGO, CA; 20060813 through 20060817
- Country of Publication:
- United States
- Language:
- English
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